2N7002BKW

N-Channel60-V(D-S)MOSFET

2N7002BKW

60V,310mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpro

2N7002BKW

60V,310mAN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •ESD

2N7002-CAR

N-ChannelEnhancementModeFieldEffect

TransistorFeatures •HighdensitycelldesignforlowRDS(ON)•Voltagecontrolledsmallsignalswitching•Highsaturationcurrentcapability•Highspeedswitching•-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable

2N7002CSM

N-CHANNELENHANCEMENTMODEMOSTRANSISTOR

2N7002D

60VN-ChannelMOSFET

2N7002DCSM

DUALN-CHANNELENHANCEMENTMODEMOSTRANSISTOR

2N7002DSPT

DualN-ChannelEnhancementMOSFET

2N7002DW

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002DW

60VN-ChannelEnhancementModeMOSFET