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2N6668

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

文件:157.87 Kbytes 页数:3 Pages

BOCA

博卡

2N6668

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

文件:71.78 Kbytes 页数:1 Pages

CENTRAL

2N6668

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

文件:151.84 Kbytes 页数:3 Pages

MOSPEC

统懋

2N6668

Darlington Power Transistor

[multicomp] 10 Ampere Darlington Power Transistors PNP Silicon 80 Volts 65 Watts Plastic Medium-Power Silicon Transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minim

文件:358.08 Kbytes 页数:5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2N6668

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A ·Complement to Type 2N6388 APPLICATIONS ·Designed for gener

文件:151.62 Kbytes 页数:2 Pages

ISC

无锡固电

2N6668

SILICON PNP POWER DARLINGTON TRANSISTOR

SILICON PNP POWER DARLINGTON TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP DARLINGTON ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER

文件:68.87 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

2N6668

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

文件:80.83 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

2N6668

DARLINGTON POWER TRANSISTORS(PNP SILICON )

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667

文件:168.05 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

2N6668

Darlington Silicon Power Transistors

文件:102.89 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

2N6668

Darlington Silicon Power Transistors

文件:76.94 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

晶体管资料

  • 型号:

    2N6668

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+Darl

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    80V

  • 最大电流允许值:

    8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD648,BD900,BDW74B,BDX54B,

  • 最大耗散功率:

    65W

  • 放大倍数:

    β>1000

  • 图片代号:

    B-84

  • vtest:

    80

  • htest:

    999900

  • atest:

    8

  • wtest:

    65

产品属性

  • 产品编号:

    2N6668

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    剪切带(CT)带盒(TB)

  • 晶体管类型:

    PNP - 达林顿

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    3V @ 100mA,10A

  • 电流 - 集电极截止(最大值):

    1mA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    1000 @ 5A,3V

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220

  • 描述:

    TRANS PNP DARL 80V 10A TO220

供应商型号品牌批号封装库存备注价格
STMicroelectronics
25+
N/A
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ONS
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ON
24+
TO220
196
询价
ON
24+
TO-220
5000
全现原装公司现货
询价
PECOR
2022+
3300
全新原装 货期两周
询价
ONS
24+
6540
原装现货/欢迎来电咨询
询价
CENTRAL
25+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ON/安森美
23+
TO-220
50000
全新原装正品现货,支持订货
询价
ON/安森美
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
更多2N6668供应商 更新时间2026-1-18 9:38:00