Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

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PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

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BOCA

博卡

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

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CENTRAL

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

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MOSPEC

统懋

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A • Complement to Type 2N6387 APPLICATIONS • Designed for general purpose amplifier and l

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ISC

无锡固电

PNP DARLINGTON TRANSISTOR

Description: PNP Darlington Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

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DARLINGTON POWER TRANSISTORS(PNP SILICON )

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667

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Darlington Silicon Power Transistors

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Darlington Silicon Power Transistors

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10 A，60 V PNP 达林顿双极功率晶体管

The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications. • High DC Current GainhFE = 3500 (Typ) @ IC = 4 Adc\n• Collector-Emitter Sustaining Voltage@ 200 mAdc VCEO(sus) = 60 Vdc (Min)2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668\n• Low Collector-Emitter Saturation VoltageVCE(sat) = 2 Vdc (Max) @ IC = 5 A\n• Monolithic Construction with Built-In Base-Emitter Sh;

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