2N652

alloy-junction germanium transistors

[INTEX/SEMITRONICSCORP] alloy-junctiongermaniumtransistors

2N652

GERMABIUM PNP MESA TRANSISTORS

GERMABIUMPNPMESATRANSISTORS GERMABIUMPNPSMALLSIGNALTRANSISTORS

2N652

Trans GP BJT PNP 0.5A;

2N6520

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.625W(Tamb=25℃) CollectorcurrentICM:-0.5A Collector-basevoltageV(BR)CBO:-350V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2N6520

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designedforapplicationsrequiringhighbreakdownvoltage.

2N6520

High Voltage Transistors

HighVoltageTransistors NPNandPNP Features •VoltageandCurrentareNegativeforPNPTransistors •Pb−FreePackageisAvailable*

2N6520

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *350VoltVCEO *Gainof15atIC=-100mA

2N6520

PNP EPITAXIAL SILICON TRANSISTOR

HIGHVOLTAGETRANSISTOR

2N6520

PNP Epitaxial Silicon Transistor

Features •HighVoltageTransistor •Collector-EmitterVoltage:VCBO=-350V •CollectorDissipation:PC(max)=625mW •Complementto2N6517

2N6520

High Voltage Transistor 625mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •ThroughHolePackage •150°CJunctionTemperature •VoltageandCurrentarenegativeforPNPtrans