SI NPN POWER BJT

Description: Si NPN Power BJT, I(C) = 20 A to 49.9 A

文件：75.09 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Transistor(30A, 60V)

PNP Transistor (30A, 60V)

文件：21.75 Kbytes 页数：1 Pages

MICROSEMI

美高森美

P-N-P SILICON POWER TRANSISTORS

[Magnatec] FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25 °C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A

文件：126.87 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-N-P SILICON POWER TRANSISTORS

[Magnatec] FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25 °C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A

文件：126.87 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-N-P SILICON POWER TRANSISTORS

[Magnatec] FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25 °C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A

文件：126.87 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 • High Switching Speed • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS •Designed for use in industrial-military power amplifier

文件：49.64 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

文件：160.67 Kbytes 页数：3 Pages

JMNIC

锦美电子

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509

文件：57.33 Kbytes 页数：2 Pages

MICROSEMI

美高森美

POWER TRANSISTORS NPN SILICON

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

文件：155.37 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

POWER TRANSISTOR(25A,200W)

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

文件：128.77 Kbytes 页数：3 Pages

MOSPEC

统懋