COLLECTOR-EMITTER VOLTAGE

文件：229.44 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The 2N6284 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. The complementary PNP type is 2N6287. Features ■ Complementary transistors i

文件：52.54 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Darlington ComplementarySilicon Power Transistors

Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s

文件：129.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

文件：101.31 Kbytes 页数：3 Pages

BOCA

博卡

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

文件：71.78 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

文件：178.71 Kbytes 页数：3 Pages

CENTRAL

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

文件：171.37 Kbytes 页数：4 Pages

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS • Power amplifier and switching circuits applications

文件：136.19 Kbytes 页数：3 Pages

ISC

无锡固电

N-P-N SILICON TRANSISTOR

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

文件：141.36 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

文件：149.27 Kbytes 页数：4 Pages

ONSEMI

安森美半导体