2A, 600V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes 页数：6 Pages

UTC

友顺

2A 600V N-channel enhanced field effect transistor

文件：760.98 Kbytes 页数：5 Pages

YFWDIODE

佑风微

N-Channel Power MOSFET

DESCRIPTION The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode p

文件：371.2 Kbytes 页数：8 Pages

NELLSEMI

尼尔半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：647.12 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体