N-Channel Power MOSFET

DESCRIPTION The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode p

文件：371.2 Kbytes 页数：8 Pages

NELLSEMI

尼尔半导体

TMOS POWER FET 2.0 AMPERES 600 VOLTS

文件：271.17 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉