NPN Silicon Power 60V to 80V, 50A

This specification covers the performance requirements for NPN silicon, power, 2N5685 and 2N5686 transistors, complimentary to 2N5864 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/464. The device package outline

Microchip

微芯科技

50 A，80 V，NPN 双极功率晶体管

The Power 50A 80 VBipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications. • High Current Capability - IC Continuous = 50 Amperes.\n• DC Current Gain - hFE = 15-60 @ IC = 25 Adc\n• Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：NPN TRANSISTOR

MICROCHIP

微芯科技

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

文件：119.82 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：TO-204AE；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 50A TO204

ONSEMI

安森美半导体