Hi-Rel NPN bipolar transistor 160 V - 0.5 A

Description The 2N5551HR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case o

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STMICROELECTRONICS

意法半导体

高可靠性NPN双极性晶体管160 V、0.5 A

The 2N5551 and SOC5551 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).\n\n Qualified as per ESCC 5202/019 specification and available in LCC-3 and UB hermetic packages, they are specifically reco • Hermetic packages \n• ESCC qualified \n• 100 krad;

ST

意法半导体

Amplifier Transistors

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ONSEMI

安森美半导体

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V • Low Leakage Current. : ICBO=50nA(Max.) VCB=120V • Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA • Low Noise : NF=8dB (Max.)

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N5551 is designed for amplifier transistor. Features • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))

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HSMC

华昕