零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
2N5550 | mplifier Transistors(NPN Silicon) AmplifierTransistors NPNSilicon Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N5550 | NPN high-voltage transistors DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage.PNPcomplements:2N5400and2N5401. FEATURES •Lowcurrent(max.300mA) •Highvoltage(max.160V). APPLICATIONS •Switchingandamplificationinhighvoltageapplicationssuchastelephony. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
2N5550 | NPN EPITAXIAL SILICON TRANSISTOR AmplifierTransistor •Collector-EmitterVoltage:VCEO=140V •CollectorDissipation:PC(max)=625mW | SamsungSamsung Group 三星三星半导体 | ||
2N5550 | NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???? NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications. | SEMTECH Semtech Corporation | ||
2N5550 | NPN EPITAXIAL SILICON TRANSISTOR AmplifierTransistor •Collector-EmitterVoltage:VCEO=140V •CollectorDissipation:PC(max)=625mW | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
2N5550 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE) GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=160V,VCEO=140V •LowLeakageCurrent. :ICBO=100nA(Max.)VCB=100V •LowSaturationVoltage :VCE(sat)=0.25V(Max.)IC=50mA,IB=5mA •LowNoise:NF=10dB(Max.) | KECKEC CORPORATION KEC株式会社 | ||
2N5550 | COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 2N5400,2N5401-->PNP 2N5550,2N5551-->NPN | MICRO-ELECTRONICS Micro Electronics | ||
2N5550 | Amplifier Transistors AmplifierTransistors NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 | ||
2N5550 | Small Signal Transistors TO-92 Case (Continued) DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | ||
2N5550 | SERIES 2N TRANSISTORS SERIES2NTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
2N5550 | NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR HighVoltageNPNTransistorForGeneralPurposeandTelephonyApplications. | CDIL CDIL | ||
2N5550 | NPN Silicon Epitaxial Planar Transistors NPNSiliconEpitaxialPlanarTransistorsforgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypesthePNPtransistorsST2N5400andST2N5401arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2N5550 | NPN Plastic Encapsulate Transistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •CollectorCurrent:ICM=0.6A •Collector-BaseVoltage:V(BR)CBO=160V •OperatingAndStorageTemperatures–55°Cto150°C •Capableof625mWattsofPowerDissipation •LeadFreeFinish/RoHSCompliant(PSuffixdesignates | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
2N5550 | TRANSISTOR (NPN) FEATURES ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.160V) | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
2N5550 | TO-92 Plastic-Encapsulate Transistors FEATURES Switchingandmplificationinigholtage Applicationssuchaselephony Lowurrent(ax.600mA) Higholtage(ax.160V) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2N5550 | NPN high-voltage transistors FEATURES ·Lowcurrent(max.300mA) ·Highvoltage(max.160V). APPLICATIONS ·Switchingandamplificationinhighvoltageapplications suchastelephony. DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plastic package.PNPcomplements:2N5400and2N5401. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
2N5550 | General Purpose Si-Epitaxial Planar Transistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack | DiotecDIOTEC 德欧泰克 | ||
2N5550 | Amplifier Transistors Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. | ||
2N5550 | NPN Plastic Encapsulated Transistor FEATURES •Switchingandamplificationinhighvoltage •Applicationssuchastelephony •Lowcurrent(max.600mA) •Highvoltage(max.160V) | SECOS SeCoS Halbleitertechnologie GmbH | ||
2N5550 | NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIER NPNSMALLSIGNALHIGHVOLTAGEGENERALPURPOSEAMPLIFIER | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
视频输出 (Vid)
- 封装形式:
直插封装
- 极限工作电压:
160V
- 最大电流允许值:
0.6A
- 最大工作频率:
>100MHZ
- 引脚数:
3
- 可代换的型号:
BF391,BF392,BF393,BFP22,BSS48,MPS-A42,MPS-A43,2N3440,3DG84G,
- 最大耗散功率:
0.625W
- 放大倍数:
- 图片代号:
A-31
- vtest:
160
- htest:
100000100
- atest:
.6
- wtest:
.625
产品属性
- 产品编号:
2N5550
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
250mV @ 5mA,50mA
- 电流 - 集电极截止(最大值):
100nA(ICBO)
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
60 @ 10mA,5V
- 频率 - 跃迁:
300MHz
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-226-3,TO-92-3 长体
- 供应商器件封装:
TO-92(TO-226)
- 描述:
TRANS NPN 140V 0.6A TO92
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
04+ |
TO-92 |
10000 |
询价 | |||
SAMSUNG |
00+ |
940 |
进口原装-真实库存-价实 |
询价 | |||
ON |
17+ |
TO-92 |
6000 |
进口原装正品假一赔十,货期7-10天 |
询价 | ||
MOTOROLA |
16+ |
CAN3 |
5000 |
原装现货假一罚十 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
NA |
19+ |
59051 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | |||
NSC |
新 |
8159 |
全新原装 货期两周 |
询价 | |||
Fcs |
1822+ |
TO-92 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
36100 |
正品授权货源可靠 |
询价 | |||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
5000 |
原装铁帽专营,代理渠道量大可订货 |
询价 |