COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

文件：224.71 Kbytes 页数：4 Pages

boca

博卡

Power Transistors

Power Transistors TO-66 Case

文件：51.32 Kbytes 页数：1 Pages

Central

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

文件：435.75 Kbytes 页数：2 Pages

Central

POWER TRANSISTORS(35W)

文件：217.42 Kbytes 页数：4 Pages

MOSPEC

统懋

NPN SILICON POWER TRANSISTORS.

NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS.

文件：166.06 Kbytes 页数：3 Pages

COMSET

isc Silicon NPN Power Transistor

DESCRIPTION • Contunuous Collector Current-IC= 1A • Power Dissipation-PD=35W @TC= 25℃ • Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS • Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,

文件：158.62 Kbytes 页数：2 Pages

ISC

无锡固电

SI NPN POWER BJT

Silicon NPN, PNP Power Transostors

文件：103.09 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

文件：362.52 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=2A • Power dissipation -PD=35W @TC=25℃ • VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS • High speed switching and linear amplification • High-voltage operational amplifiers • Switching regulators ,converters • Deflectio

文件：114.66 Kbytes 页数：3 Pages

SAVANTIC

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

文件：362.52 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司