丝印：2N2222A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Feature complementary NPN Type available

文件：870.4 Kbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：2N2222A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Feature complementary NPN Type available

文件：870.4 Kbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：1P；Package：SC-89；General Purpose Transistor

General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requirement

文件：467.44 Kbytes 页数：3 Pages

FS

丝印：1P；Package：SOT-23；General Purpose Transistor

General Purpose Transistor NPN Silicon • We declare that the material of product compliance with RoHS requirements.

文件：451.66 Kbytes 页数：6 Pages

FS

丝印：Q1P；Package：SOT-23；General Purpose Transistors NPN Silicon

1. FEATURES • Silicon NPN transistor in a SOT-23 Plastic Package • Collector currents up to 600 mA, Qualified to AEC-Q101 Standards for High Reliability, HF Product • General purpose amplifier, Meet the stringent requirements of automotive applications

文件：524.96 Kbytes 页数：5 Pages

FS

丝印：1P；Package：SOT-23；General Purpose Transistors NPN Silicon

1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

文件：641.78 Kbytes 页数：6 Pages

FS

丝印：P1；Package：SOT-323；General Purpose Transistor

General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC−70 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requ

文件：331.91 Kbytes 页数：3 Pages

FS

HIGH SPEED SWITCHES

The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current g

文件：172.29 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：142.87 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：241.99 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体