2N120

2A, 1200V N-CHANNEL POWER MOSFET

The UTC 2N120 provide excellent RDS(ON), low gate chargeand operation with low gate voltages. This device is suitable foruse as a load switch or in PWM applications.; RDS(ON) ≤ 7.5Ω @ VGS=10V, ID=1.0A Low Reverse Transfer Capacitance Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness;

2N1208

POWER TRANSISTORS

POWERTRANSISTORS

2N1209

POWER TRANSISTORS

POWERTRANSISTORS

2N120-E4

2.0A, 1200V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC2N120-E4provideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdeviceis suitableforuseasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤10Ω@VGS=10V,ID=1.0A *LowReverseTransferCapacitance *FastSwitchingCap

2N120-E4

Planar Power MOSFET  (N-CH)