DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：96.77 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：94.67 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：93.91 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：93.09 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

丝印：2D2N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：346.02 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：2D2S40Y；Package：SOT669；N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180

文件：309.41 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2D2T；Package：SOT-23；TLV767 1-A, 16-V Precision Linear Voltage Regulator

文件：5.22211 Mbytes 页数：45 Pages

TI

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