丝印：2D2S40Y；Package：SOT669；N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180

文件：309.41 Kbytes 页数：13 Pages

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Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

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N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180

文件：309.41 Kbytes 页数：13 Pages

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N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. • 180 A continuous ID(max) rating\n• Strong SOA (linear-mode) rating\n• Low Qrr, QG and QGD for high system efficiency and low EMI designs\n• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C\n• Low parasitic inductance and resistance;

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