24A, 600V   N-CHANNEL  SUPER-JUNCTION MOSFET

The UTC 24NM60 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converters for power applications. RDS(ON) < 0.16Ω @ VGS=10V, ID=12AHigh Switching Speed100% Avalanche Tested;

UTC

友顺

N-channel 600 V, 0.200 廓, 16 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

文件：564.71 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：24NM60N；Package：D2PAK；N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

Description These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref

文件：899.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：314.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

Description These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref

文件：899.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：311.58 Kbytes 页数：2 Pages

ISC

无锡固电