丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

文件：349.13 Kbytes 页数：9 Pages

SILAN

士兰微

丝印：24N60M6；Package：D²PAK；N-channel 600 V, 162 m廓 typ., 17 A, MDmesh??M6 Power MOSFET in a D짼PAK

文件：445.35 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：24N60M2；Package：TO-220FPwidecreepage；N-channel 600 V, 0.168 ??typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP wide creepage package

文件：747.85 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：24N60M2；Package：TO-220FP；N-channel 600 V, 0.168 廓 typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package

文件：692.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

High Speed IGBT

VCES = 600 V\nIC25 = 48 A\nVCE(sat) = 2.5 V\ntfi typ = 170 ns International standard packages\nGuaranteed Short Circuit SOA capability\nLow VCE(sat)\n  - for low on-state conduction losses\nHigh current handling capability\nMOS Gate turn-on\n  - drive simplicity\nFast Fall Time for switching speeds up to 50 kHzApplications\nAC and DC motor speed control\nUnint;

Littelfuse

力特

Cool MOS™ Power Transistor

Feature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance

Infineon

英飞凌