| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.14 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60TD2；Package：TO-220-3L；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN |
详细参数
- 型号：
24N60
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
CoolMOS Power Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
12048 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
INF进口原 |
17+ |
220-247 |
6200 |
询价 | |||
INFINEON |
23+ |
TO-3P |
6000 |
原装正品,假一罚十 |
询价 | ||
INF |
20+ |
220-247 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INF |
23+ |
220-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
英飞凌INFINEON |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-3P |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
INFINEON |
26+ |
SOP8 |
86720 |
全新原装正品价格最实惠 假一赔百 |
询价 | ||
INFINEON |
22+ |
TO247 |
8000 |
原装正品支持实单 |
询价 |
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