High Speed IGBT

VCES = 600 V\nIC25 = 48 A\nVCE(sat) = 2.5 V\ntfi typ = 170 ns International standard packages\nGuaranteed Short Circuit SOA capability\nLow VCE(sat)\n  - for low on-state conduction losses\nHigh current handling capability\nMOS Gate turn-on\n  - drive simplicity\nFast Fall Time for switching speeds up to 50 kHzApplications\nAC and DC motor speed control\nUnint;

Littelfuse

力特

High Speed IGBT

VCES = 600 V IC25 = 48 A VCE(sat) = 2.5 V tfi typ = 170 ns Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplic

文件：107.58 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Speed IGBT

VCES = 600 V IC25 = 48 A VCE(sat) = 2.5 V tfi typ = 170 ns Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplic

文件：107.58 Kbytes 页数：2 Pages

IXYS

艾赛斯

SIP-4

HONEYWELL

霍尼韦尔

上传：中天科工半导体（深圳）有限公司

SIP-4

HONEYWELL

霍尼韦尔

上传：中天科工半导体（深圳）有限公司