丝印：20N03L；Package：TO-252；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

文件：447.31 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：20N03TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：4.38125 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：20N03L；Package：TO-252-3-1；OptiMOS Buck converter series Feature Ideal for fast switching buck converters

文件：9.34933 Mbytes 页数：9 Pages

Infineon

英飞凌

HDTMOS E-FET High Density Power FET DPAK for Surface Mount

恩XP

中低压MOSFET

PINGWEI

平伟