N-Channel 30-V (D-S) MOSFET

文件：1.01516 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：288.56 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：20N03；Package：SOP-8；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：311.77 Kbytes 页数：9 Pages

CYSTEKEC

全宇昕科技

DFN-中低压MOS

GOODWORK

固得沃克电子

N-Channel 30-V (D-S) MOSFET

文件：1.01546 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：959.95 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.01522 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：20N03L；Package：TO-252-3-1；OptiMOS Buck converter series

OptiMOS Buck converter series Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

文件：158.76 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：20N03L；Package：PG-TO252-3；OptiMOS??Buck converter series

Feature • N-Channel • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • 175°C operating temperature • dv/dt rated • Ideal for fast switching buck converters • Pb.free lead plating, RoHS compliant

文件：9.34933 Mbytes 页数：9 Pages

Infineon

英飞凌

丝印：20N03L；Package：TO-252；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

文件：447.31 Kbytes 页数：5 Pages

UMW

友台半导体