1S20_V01

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

1S200

SCHOTTKY BARRIER RECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

1S200

SCHOTTKY BARRIER RECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

1S200

Schottky Barrier Rectifier

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

1S200

SCHOTTKY BARRIER RECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

1S2074

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=4.0nsmax) •Highreliabilitywithglassseal.

1S2074H

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=4.0nsmax) •Highreliabilitywithglassseal.

1S2074H

Silicon Epitaxial Planar Diode for High Speed Switching; •  Low capacitance. (C = 3.0 pF max)\n•  Short reverse recovery time. (trr = 4.0 ns max)\n•  High reliability with glass seal.;

Silicon Epitaxial Planar Diode for High Speed Switching

1S2075

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.5pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

1S2075K

Silicon Epitaxial Planar Diode for High Speed Switching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.5pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.