1.2A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po

文件：297.85 Kbytes 页数：6 Pages

UTC

友顺

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

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ETCList of Unclassifed Manufacturers

未分类制造商

Drain Current ID= 1.2A@ TC=25C

·FEATURES • Drain Current ID= 1.2A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12.5Ω (Max) • Fast Switching ·APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

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ISC

无锡固电

650V N-Channel Power MOSFET

Features RDS(ON)

文件：2.30179 Mbytes 页数：8 Pages

SY

顺烨电子

N-CHANNEL MOSFET

DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

文件：434.49 Kbytes 页数：6 Pages

ZSELEC

淄博圣诺

N-CHANNEL POWER MOSFET

文件：717.14 Kbytes 页数：9 Pages

UMW

友台半导体

1.2A , 650V N-CHANNEL  POWER MOSFET

The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, P • RDS(ON) =12.5Ω@VGS = 10V. \n• Ultra Low gate charge (typical 5.0nC) \n• Low reverse transfer capacitance (CRSS = typical 3.0 pF) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

GENERAL PURPOSE SILICON DIODES

GENERAL PURPOSE SILICON DIODES This device is a Silicon Double Plug Diode for general purpose use in computer, industrial and military applications.

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side o

文件：21.45 Kbytes 页数：1 Pages

MICROSEMI

美高森美

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to ground (see figure

文件：21.57 Kbytes 页数：1 Pages

MICROSEMI

美高森美