1N65中文资料1.2A , 650V N-CHANNEL  POWER MOSFET数据手册UTC规格书

描述 Description

The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

特性 Features

• RDS(ON) =12.5Ω@VGS = 10V.
• Ultra Low gate charge (typical 5.0nC)
• Low reverse transfer capacitance (CRSS = typical 3.0 pF)
• Fast switching capability
• Avalanche energy specified
• Improved dv/dt capability, high ruggedness