1N6506电路保护的TVS-二极管规格书PDF中文资料

DESCRIPTION

These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the power supply line (see figure 1). This circuit application is further complimented by the 1N6507 (separate data sheet) that has a common anode. An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting.

FEATURES

• Hermetic Ceramic Package

• Isolated Diodes to Eliminate Cross-Talk Voltages

• High Breakdown Voltage VBR > 60 V at 10 μA

• Low Leakage IR< 100nA at 40 V

• Low Capacitance C < 4.0 pF

• Switching Speeds less than 20 ns

• Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N6506 for a JANTX screen.

APPLICATIONS / BENEFITS

• High Frequency Data Lines

• RS-232 & RS-422 Interface Networks

• Ethernet: 10 Base T

• Computer I/O Ports

• LAN

• Switching Core Drivers

• IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20 μs