SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

文件：30.8 Kbytes 页数：2 Pages

SYNSEMI

Small Signal Schottky Diodes

VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasi

文件：144.76 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

SMALL SIGNAL SCHOTTKY DIODE

Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc

文件：332.37 Kbytes 页数：2 Pages

SUNMATE

森美特

15mA Axial Leaded Schottky Barrier Diodes

Features ● For general purpose applications ● Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switc

文件：217.69 Kbytes 页数：2 Pages

SUNMATE

森美特

SMALL SIGNAL SCHOTTKY DIODE

VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it id

文件：59.02 Kbytes 页数：2 Pages

BILIN

银河微电

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application

文件：82.78 Kbytes 页数：2 Pages

CHENYI

商朗电子

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance

文件：49.74 Kbytes 页数：2 Pages

DIODES

美台半导体

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

文件：36.05 Kbytes 页数：2 Pages

EIC

Small-Signal Diode Schottky Diodes

Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching

文件：126.35 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information

文件：128.49 Kbytes 页数：4 Pages

MCC