首页 >1N626>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

1N626

silicon diode

SILICON DIODE

文件:266.41 Kbytes 页数:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1N626

Diode Switching 35V 0.02A 2-Pin DO-7

NJS

新泽西半导体

1N6263

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and cou

文件:439.2 Kbytes 页数:2 Pages

SAMYANG

三阳电子

1N6263

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.

文件:49.74 Kbytes 页数:3 Pages

STMICROELECTRONICS

意法半导体

1N6263

SCHOTTKY DIODES

SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.

文件:433.18 Kbytes 页数:3 Pages

DIGITRON

1N6263

SMALL SIGNAL SCHOTTKY DIODE

VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it id

文件:276.74 Kbytes 页数:2 Pages

DSK

1N6263

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

文件:54.16 Kbytes 页数:2 Pages

JINGHENG

晶恒

1N6263

Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low for ward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swit

文件:99.85 Kbytes 页数:2 Pages

GE

1N6263

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

文件:56.73 Kbytes 页数:2 Pages

JINANJINGHENG

晶恒集团

1N6263

SCHOOTTKY BARRIER DIODES

SCHOOTTKY BARRIER DIODES FEATURES Hermetically Sealed Metalurgically Bonded Double Plug Construction

文件:101.8 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

技术参数

  • Peak Reverse Repetitive Voltage:

    35V

  • Peak Reverse Recovery Time:

    1000ns

  • Peak Reverse Current:

    1uA

  • Peak Non-Repetitive Surge Current:

    0.5A

  • Peak Forward Voltage:

    1.5@0.004AV

  • Operating Junction Temperature:

    -65 to 200°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Power Dissipation:

    400mW

  • Maximum Operating Temperature:

    200°C

  • Maximum Continuous Forward Current:

    0.02A

  • Configuration:

    Single

供应商型号品牌批号封装库存备注价格
ON
24+
N/A
5642
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
GI
24+/25+
1200
原装正品现货库存价优
询价
ONS
24+
1500
询价
SUNMATE一森美特
24+
SOD-123
5000
全现原装公司现货
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
ON
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
MOT
23+
NA
111
专做原装正品,假一罚百!
询价
MOTOROLA
2026+
DO201
12500
全新原装正品,本司专业配单,大单小单都配
询价
三年内
1983
只做原装正品
询价
DIODES
19+
SOD123
200000
询价
更多1N626供应商 更新时间2026-4-17 15:08:00