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1N5817	文件：190.73 Kbytes Page：2 Pages	VOLTAGE20V~40V1.0AMPSchottkyBarrierRectifiers FEATURES Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability *Epitaxialconstruction	SECOS SeCoS Halbleitertechnologie GmbH	SECOS
1N5817	文件：39.63 Kbytes Page：1 Pages	SCHOTTKYBARRIERRECTIFIER VOLTAGE：20-40VCURRENT：1.0A FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapabitity •Highreliability •Highsurgecapability	CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司	CHONGQING
1N5817	文件：85.79 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs	MIC MIC GROUP RECTIFIERS	MIC
1N5817	文件：190.87 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS Features •Metalsiliconjunction,majoritycarrierconduction •Guardingforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability •lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpola	SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司	SEMTECH_ELEC
1N5817	文件：27.56 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERDIODES PRV:20-40Volts IO:1.0Ampere FEATURES: Highcurrentcapability Highsurgecurrentcapability Highreliability Highefficiency Lowpowerloss Lowcost *Lowforwardvoltagedrop	SYNSEMI SynSemi，Inc.	SYNSEMI
1N5817	文件：213.28 Kbytes Page：2 Pages	SchottkyBarrierRectifiers SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand	MOSPEC MOSPEC	MOSPEC
1N5817	文件：40.74 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequencyin	CTC ctconline	CTC
1N5817	文件：70.33 Kbytes Page：4 Pages	SchottkyBarrierRectifier	VishayVishay Siliconix 威世科技	Vishay
1N5817	文件：128.539 Kbytes Page：1 Pages	SCHOTTKYBARRIERRECTIFIERS AXIALLEADRECTIFIERS ...employingtheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconsrjctionwithoxidepassivationandmetaloverlapcontact. Ideallysuitedforuseasrectifiersinlow-voltage,high-frequencyinvert	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N5817	文件：140.85 Kbytes Page：3 Pages	1.0AmpSiliconSchottkyBarrierRectifiers Features •Lowforwardvoltagedrop •Highcurrentcapability •Highsurgecurrentcapability •Highreliability •Epitaxialconstruction	CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司	CYSTEKEC
1N5817	文件：64.33 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcu	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N5817	文件：657.86 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurre	DIOTECH Diotech Company.	DIOTECH
1N5817	文件：90.3 Kbytes Page：6 Pages	SchottkyRectifier,1.0A DESCRIPTION The1N5817axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,freewheelingdiodes,andreversebatteryprotection. FEATURES •Lowprofile,axialleadedoutline	VishayVishay Siliconix 威世科技	Vishay
1N5817	文件：274.88 Kbytes Page：2 Pages	1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability *Epitaxialconstruction	TGS Tiger Electronic Co.,Ltd	TGS
1N5817	文件：118.05 Kbytes Page：2 Pages	PLASTICSCHOTTKYBARRIERRECTIFIER Features •LowForwardVoltageDrop •HighCurrentCapability •Hightemperaturesolderingguaranteed: 260℃/10seconds,0.375(9.5mm)leadlength, 5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard	DACHANGRugao Dachang Electronics Co., Ltd 如皋市大昌如皋市大昌电子有限公司	DACHANG
1N5817	文件：32.13 Kbytes Page：2 Pages	SchottkyBarrierRectifier ReverseVoltage:20to40V ForwardCurrent:1.0A Features -PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 -Lowpowerloss,highefficiency -Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications -Guardri	COMCHIPComchip Technology 典琦典琦科技股份有限公司	COMCHIP
1N5817	文件：61.96 Kbytes Page：2 Pages	1.0AMP.SchottkyBarrierRectifiers	TSCTaiwan Semiconductor Company, Ltd 台半台湾半导体股份有限公司	TSC
1N5817	文件：338 Kbytes Page：2 Pages	CURRENT1.0AmpereVOLTAGE20to40Volts Features •PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapabi	DAESAN Daesan Electronics Corp.	DAESAN
1N5817	文件：34.43 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyin	HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司	HY
1N5817	文件：184.21 Kbytes Page：4 Pages	1ASchottkyBarrierRectifiers Features •Guardringforovervoltageprotection •Metaltosiliconjunction,majoritycarrierconduction •Verysmallconductionlosses •Extremelyfastswitching •Highcurrentcapability,lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters	TAITRON TAITRON	TAITRON

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产品属性

产品编号：
1N5817H
制造商：
Taiwan Semiconductor Corporation
类别：
分立半导体产品 > 二极管 - 整流器 - 单
系列：
Automotive, AEC-Q101
包装：
卷带（TR）
二极管类型：
肖特基
电流 - 平均整流 (Io)：
1A
速度：
快速恢复 =< 500ns，> 200mA（Io）
不同 Vr、F 时电容：
55pF @ 4V，1MHz
安装类型：
通孔
封装/外壳：
DO-204AL，DO-41，轴向
供应商器件封装：
DO-204AL（DO-41）
工作温度 - 结：
-55°C ~ 125°C
描述：
DIODE SCHOTTKY 20V 1A DO204AL

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市芯祺盛科技有限公司	1N5817H	ZOWIE	19+	DO-204AL	12000	一级代理,可验代理证!	询价
深圳市宏捷佳电子科技有限公司	1N5817H	Taiwan Semiconductor Corporati	24+	DO-204AL(DO-41)	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市科雨电子有限公司	1N5817HR1G	TAIWAN	1809+	DO-204	16750	就找我吧!--邀您体验愉快问购元件!	询价
深圳市惊羽科技有限公司	1N5817HR0G	TSC-台半	24+25+/26+27+	DO-204	236148	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市永贝尔科技有限公司	1N5817L	BYTES	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市莱克讯科技有限公司	1N5817LT1G	ON	2017+	1206	54896	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市百视威讯电子科技有限公司	1N5817LT1G		23+	N/A	30350	正品授权货源可靠	询价
深圳市拓亿芯电子有限公司	1N5817LT1G	ON/安森美	23+	SOT123	15000	全新原装现货,价格优势	询价
深圳市汇莱威科技有限公司	1N5817LT1G	ON/安森美		SOD-123	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	1N5817LT1G	ON/安森美	23+	SOD-123	50000	全新原装正品现货,支持订货	询价

更多1N5817H供应商更新时间2024-5-11 11:56:00

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