丝印：1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1• Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps • Adaptive CTLE Up to 34 dB Boost at 5.65 GHz • Self-Tuning 5-Tap DFE • Raw Equalized and Retimed Data Loopback • Adjustable Transmit V OD: 600 to 1300 mVp-p • Settab

文件：965.5 Kbytes 页数：55 Pages

TI

德州仪器

丝印：1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1• Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps • Adaptive CTLE Up to 34 dB Boost at 5.65 GHz • Self-Tuning 5-Tap DFE • Raw Equalized and Retimed Data Loopback • Adjustable Transmit V OD: 600 to 1300 mVp-p • Settab

文件：965.5 Kbytes 页数：55 Pages

TI

德州仪器

丝印：1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1• Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps • Adaptive CTLE Up to 34 dB Boost at 5.65 GHz • Self-Tuning 5-Tap DFE • Raw Equalized and Retimed Data Loopback • Adjustable Transmit V OD: 600 to 1300 mVp-p • Settab

文件：965.5 Kbytes 页数：55 Pages

TI

德州仪器

丝印：1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1• Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps • Adaptive CTLE Up to 34 dB Boost at 5.65 GHz • Self-Tuning 5-Tap DFE • Raw Equalized and Retimed Data Loopback • Adjustable Transmit V OD: 600 to 1300 mVp-p • Settab

文件：965.5 Kbytes 页数：55 Pages

TI

德州仪器

丝印：1D16；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：1D16；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：1D16；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：1D1N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：131.95 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：1D1N2；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 25 V, 0.85 m, 264 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typ

文件：294.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D1N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：149.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体