丝印：1D1N2；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 25 V, 0.85 m, 264 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typ

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安森美半导体

Power MOSFET, Single, N-Channel, 25V/0.85mΩ, WDFN9 3x3, Source Down

MOSFET, Power, 25V Single N-Channel, Source-Down Technology, 0.83mΩ, 228A, WDFN9 3.3x3.3mm • Low RDS(on) with Source-Down Technologies\n• Higher Power Density, Improved Thermal Performance, and Higher Efficiency\n• Low QG and Capacitance\n• Minimize Driver Losses\n• RoHS Compliant;

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安森美半导体

原厂原封

ON

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SOT-963

ON

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