丝印：1D1N04C；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 1.1 m, 277 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：321.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D16；Package：VSSOP；Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.37467 Mbytes 页数：40 Pages

TI

德州仪器

丝印：1D16；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI

德州仪器

丝印：1D16；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI

德州仪器

丝印：1D16；Package：VSSOP；Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.37467 Mbytes 页数：40 Pages

TI

德州仪器

丝印：1D15NG；Package：DFN5；MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 m, 245 A

文件：185.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D15N3CG；Package：LFPAK8；MOSFET - Power, Single N-Channel, LFPAK8 30 V, 1.15 m, 257 A

文件：323.38 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

POWER TRANSISTOR MODULES FOR POWER CONVERTER

The outside of the power transistor module was specially designed for easy installation and has three to six terminals arranged in one row on the same plane to simplify connection with one driver.

FUJI

富士通

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