18N20F

Marking：18N20F；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The18N20Fusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

18N20J

Marking：18N20；Package：TO-251；DC-DC & DC-AC Converters for telecom,

Application ·DC-DC&DC-ACConvertersfortelecom, industrialandconsumerenvironment ·UninterruptiblePowerSupply(UPS) ·SwitchModeLowPowerSupplies ·IndustrialActuators

18N20J

Marking：18N20；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

Description The18N20Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

18N20T

Marking：18N20；Package：TO-220；DC-DC & DC-AC Converters for telecom,

Application ·DC-DC&DC-ACConvertersfortelecom, industrialandconsumerenvironment ·UninterruptiblePowerSupply(UPS) ·SwitchModeLowPowerSupplies ·IndustrialActuators

IPF018N10NM5LF2

Marking：18N10LF2；Package：PG-TO263-7；MOSFET OptiMOS™ 5 Linear FET 2 , 100 V

Features •Idealforhot‑swapande‑fuseapplications •Verylowon‑resistanceRDS(on) •WidesafeoperatingareaSOA •N‑channel,normallevel •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPM018N10NM5LF2

Marking：18N10LF2；Package：PG-HSOG-4；MOSFET OptiMOS™ 5 Linear FET 2, 100 V

Features •Idealforhot‑swapande‑fuseapplications •Verylowon‑resistanceRDS(on) •WidesafeoperatingareaSOA •LowVgs(th)spread •Improvedcurrentsharing •N‑channel,normallevel •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIE

RM18N200HD

Marking：18N200；Package：TO-263；N-Channel Super Junction Power MOSFET

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UltraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant Halogen-free VDS=200V,ID=18A, VGS=10V,RDS(on)

RM18N200T2

Marking：18N200；Package：TO-220；N-Channel Super Junction Power MOSFET

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UltraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant Halogen-free VDS=200V,ID=18A, VGS=10V,RDS(on)

RM18N200TI

Marking：18N200；Package：TO-220F；N-Channel Super Junction Power MOSFET

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UltraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant Halogen-free VDS=200V,ID=18A, VGS=10V,RDS(on)

STB18N60M2

Marking：18N60M2；Package：D2PAK；N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2