FCT D-SUB MINIATURE CONNECTOR

文件：222.91 Kbytes 页数：1 Pages

Molex

莫仕

FCT D-SUB MINIATURE CONNECTOR

文件：222.91 Kbytes 页数：1 Pages

Molex

莫仕

丝印：1733；Package：WSON；CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET

1 Features • Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Pb-Free • RoHS Compliant • Halogen-Free • SON 2-mm × 2-mm Plastic Package 2 Applications • DC-DC Converters • Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x

文件：467.86 Kbytes 页数：12 Pages

TI

德州仪器

丝印：1733；Package：WSON；CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET

1 Features • Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Pb-Free • RoHS Compliant • Halogen-Free • SON 2-mm × 2-mm Plastic Package 2 Applications • DC-DC Converters • Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x

文件：467.86 Kbytes 页数：12 Pages

TI

德州仪器

丝印：1733；Package：WSON；CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET

1 Features • Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Pb-Free • RoHS Compliant • Halogen-Free • SON 2-mm × 2-mm Plastic Package 2 Applications • DC-DC Converters • Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x

文件：467.86 Kbytes 页数：12 Pages

TI

德州仪器

丝印：1733；Package：WSON；CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET

1 Features • Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Pb-Free • RoHS Compliant • Halogen-Free • SON 2-mm × 2-mm Plastic Package 2 Applications • DC-DC Converters • Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x

文件：467.86 Kbytes 页数：12 Pages

TI

德州仪器

丝印：1733；Package：WSON；CSD17313Q2 30-V N-Channel NexFET™ Power MOSFET

1 Features • Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Pb-Free • RoHS Compliant • Halogen-Free • SON 2-mm × 2-mm Plastic Package 2 Applications • DC-DC Converters • Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x

文件：467.86 Kbytes 页数：12 Pages

TI

德州仪器

丝印：17315N6；Package：PG-TSDSON-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.1209 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：173492；Package：TSSOP；IEEE 802.3af PoE POWERED DEVICE CONTROLLERS WITH AUTO-RETRY

1FEATURES · Auto-Retry After Current-Limit Fault · TPS2375-1: IEEE 802.3af Thresholds · TPS2377-1: Legacy Thresholds · Fully Supports IEEE 802.3af Specification · Integrated 0.58-Ω, 100-V, Low-Side Switch · 15-kV System Level ESD Capable · Programmable Inrush Current Control · Fixed 450-mA

文件：893.49 Kbytes 页数：29 Pages

TI

德州仪器

丝印：173492；Package：TSSOP；IEEE 802.3af PoE POWERED DEVICE CONTROLLERS WITH AUTO-RETRY

1FEATURES · Auto-Retry After Current-Limit Fault · TPS2375-1: IEEE 802.3af Thresholds · TPS2377-1: Legacy Thresholds · Fully Supports IEEE 802.3af Specification · Integrated 0.58-Ω, 100-V, Low-Side Switch · 15-kV System Level ESD Capable · Programmable Inrush Current Control · Fixed 450-mA

文件：893.49 Kbytes 页数：29 Pages

TI

德州仪器