丝印：16N06C；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：16N06W；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 42A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：231.25 Kbytes 页数：6 Pages

EXCELLIANCE

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：230.07 Kbytes 页数：5 Pages

EXCELLIANCE

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 6.7A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：211.66 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技