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RMP12N65T2

丝印:12N65;Package:TO-220;N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件:1.55476 Mbytes 页数:7 Pages

RECTRON

丽正

RMP12N65TI

丝印:12N65;Package:TO-220F;N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件:1.55476 Mbytes 页数:7 Pages

RECTRON

丽正

12N65ANF

丝印:12N65ANF;Package:TO-220F;650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件:3.28183 Mbytes 页数:8 Pages

SY

顺烨电子

12N65ANP

丝印:12N65ANP;Package:TO-220;650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件:3.28183 Mbytes 页数:8 Pages

SY

顺烨电子

12N65G-T2Q-T

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

文件:374.34 Kbytes 页数:7 Pages

UTC

友顺

12N65G-TA3-T

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

文件:374.34 Kbytes 页数:7 Pages

UTC

友顺

12N65G-TF1-T

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

文件:374.34 Kbytes 页数:7 Pages

UTC

友顺

12N65G-TF3-T

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

文件:374.34 Kbytes 页数:7 Pages

UTC

友顺

12N65L-T2Q-T

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

文件:374.34 Kbytes 页数:7 Pages

UTC

友顺

12N65L-TA3-T

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

文件:374.34 Kbytes 页数:7 Pages

UTC

友顺

技术参数

  • Vdss(V):

    650

  • Vgss(V):

    30

  • Id(A):

    12

  • Package:

    TO-220

供应商型号品牌批号封装库存备注价格
UTC
24+
TO220F
995000
郑重承诺只做原装进口现货
询价
UBIQ
25+
TO220F
15000
全新原装现货,价格优势
询价
UTC/友顺
2447
TO-220F220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
JSM白板
23+
TO220F
50000
全新原装正品现货,支持订货
询价
VBsemi
23+
TO220F
50000
全新原装正品现货,支持订货
询价
S
22+
TO-220F
6000
十年配单,只做原装
询价
GC
23+
TO-220F
20913
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
VBsemi
21+
TO220F
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
WS
26+
TO220F
37887
一级代理优势现货,全新正品直营店
询价
DONGHAI
23+
TO-220
80000
原装正品,一级代理
询价
更多12N65供应商 更新时间2026-10-31 16:02:00