丝印：12N65；Package：TO-220C；12A 650V N-channel Enhancement Mode Power MOSFET

文件：891.31 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：12N65；Package：TO-220C；12A 650V N-channel Enhancement Mode Power MOSFET

文件：891.93 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：12N65；Package：TO-220C；12A 650V N-channel Enhancement Mode Power MOSFET

文件：891.23 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：12N65；Package：TO-220C；12A 650V N-channel Enhancement Mode Power MOSFET

文件：892.18 Kbytes 页数：11 Pages

WXDH

东海半导体

N-Channel MOSFET

■Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 38nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V 100% Avalanche Te

文件：473.94 Kbytes 页数：7 Pages

HAOHAI

浩海电子

650V N-Channel Power MOSFET

Features RDS(ON)

文件：2.22075 Mbytes 页数：8 Pages

SY

顺烨电子

12A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

文件：374.34 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：393.52 Kbytes 页数：8 Pages

UTC

友顺

12A mps,650 Volts N-CHANNEL MOSFET

文件：194.68 Kbytes 页数：2 Pages

CHONGQING

平伟实业

Drain Current ?밒D= 12A@ TC=25C

文件：136.44 Kbytes 页数：2 Pages

ISC

无锡固电