丝印：12N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.95 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：12N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.82 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：12N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：12N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications

文件：498.37 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：12N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.28183 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：12N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.28183 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：12N80；Package：TO-220F；800V N-Channel Planar MOSFET

Features RDSON=0.64Ω @Vgs=10V, Id=6A Low gate Charge(typical 58.2nC) Low Crss (typical 6.5pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：2.60847 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：12N06NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features • Optimized for motor drives and battery powered applications • Optimized for top side cooling • High current capability • 175°C rated • 100 avalanche tested • Superior thermal performance • N-Channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-2

文件：1.45922 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：12N04LM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

Features • N-channel • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Optimized for syncronous application • 175 °C rated

文件：1.53462 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：12NO4NM6；Package：PG-TDSON-8FL；OptiMOS™ 6 Power-Transistor, 40 V

Features « Nechannel « Very low on-resistance Rosion « Superior thermal resistance. « 100 avalanche tested « Pb-free lead plating; RoHS compliant « Halogen-free according to IEC61249-2-21 - Optimized for low voltage drive applications - Optimized for battery powered applications « Oplimiz

文件：1.94537 Mbytes 页数：12 Pages

Infineon

英飞凌