丝印：12A020M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 116 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

文件：1.55529 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：12A030M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 78 A at TC = 25°C • RDS(on) = 30 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

文件：1.58425 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：12A040M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 61 A at TC = 25°C • RDS(on) = 40 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

文件：1.62198 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：12A060M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 44 A at TC = 25°C • RDS(on) = 60 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

文件：1.58934 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：12A080M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 34 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

文件：1.58365 Mbytes 页数：16 Pages

INFINEON

英飞凌

Pico-TR Series

ONSEMI

安森美半导体

Pico-TR Series

ONSEMI

安森美半导体

Pico-TR Series

ONSEMI

安森美半导体

Package：SC-96；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 12V 1A 3CPH

ONSEMI

安森美半导体

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 12V 1A 3MCPH

ONSEMI

安森美半导体