AIMCQ120R020M1T

丝印：12A020M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=116AatTC=25°C •RDS(on)=19mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestde

AIMCQ120R020M1T

Automotive CoolSiC™ MOSFET 1200 V in Q-DPAK (HDSOP-22-3), 19 mΩ

• 0V turn-off\n• Creepage 4.8mm\n• Symmetrical lead layout\n• .XT technology\n\n优势:\n• Lower package parasitics\n• Lower switching losses\n• Simplified design\n• Optimized PCB assembly\n;

AIMZH120R020M1T

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=100AatTC=25°C •RDS(on)=19mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswit

AIMZHN120R020M1T

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=100AatTC=25°C •RDS(on)=19mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswit

IMW120R020M1H

CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET

Features •VDSS=1200VatTvj=25°C •IDCC=98AatTvj=25°C •RDS(on)=19mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltageca