首页 >丝印反查>11N60C2

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

SPA11N60C2

Marking:11N60C2;Package:P-TO220-3-31;Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB11N60C2

Marking:11N60C2;Package:P-TO263-3-2;Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP11N60C2

Marking:11N60C2;Package:P-TO220-3-1;Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格

相关库存

更多