丝印：11N60C2；Package：P-TO220-3-1；Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

文件：160.17 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics. Structure Epitaxial planar type PNP silicon transistor

文件：1.03546 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity

文件：119.8 Kbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

文件：160.17 Kbytes 页数：14 Pages

Infineon

英飞凌