10A, 650V  N-CHANNEL  SUPER-JUNCTION MOSFET

The UTC  10NM65 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching  performance, minimal on-state resistance.  The UTC  10NM65 is universally applied in electronic lamp ballasts based on half bridge topology, high efficie RDS(ON) < 0.48Ω @ VGS=10V, ID = 5.0 AHigh Switching SpeedImproved dv/dt capability;

UTC

友顺

N-Channel 650 V (D-S) MOSFET

文件：1.854 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：504.03 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.43 廓, 9 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

文件：527.2 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：504.03 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体