丝印：10H220；Package：TO252；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

文件：432.59 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：10H220LD；Package：PowerDI5060-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  100 Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Wettable Flank for Improved Optical Inspections  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

文件：511.43 Kbytes 页数：7 Pages

DIODES

美台半导体