丝印：10H220；Package：TO252；N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：432.59 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：10H220LD；Package：PowerDI5060-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features • 100 Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Wettable Flank for Improved Optical Inspections • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony

文件：511.43 Kbytes 页数：7 Pages

DIODES

美台半导体