3.68*6.22mm Multi-Color Rectangular Legend LED Lamps

文件：150.4 Kbytes 页数：7 Pages

EVERLIGHT

台湾亿光

丝印：1006AL；Package：VFQFN；VCXO-To-6 LVCMOS Outputs

Features •Six LVCMOS/LVTTL outputs, 20 nominal output impedance •Output Q5 can be selected for ÷1 or ÷2 frequency relative to the crystal frequency •Output frequency range: 12MHz to 31.25MHz •Crystal pull range: ±90ppm (typical) •Synchronous output enable places outputs in High- Impedance s

文件：595.06 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：1006AL；Package：VFQFN；VCXO-To-6 LVCMOS Outputs

Features •Six LVCMOS/LVTTL outputs, 20 nominal output impedance •Output Q5 can be selected for ÷1 or ÷2 frequency relative to the crystal frequency •Output frequency range: 12MHz to 31.25MHz •Crystal pull range: ±90ppm (typical) •Synchronous output enable places outputs in High- Impedance s

文件：595.06 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：1006NAB；Package：SOT669；100 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件：717.53 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：1006NAB；Package：SOT669；100 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：281.96 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：1006PAB；Package：SOT669；100 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件：717.88 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：1006PAB；Package：SOT669；100 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：279.23 Kbytes 页数：14 Pages

NEXPERIA

安世

金手指连接器

Amphenol

安费诺

金手指连接器

Amphenol

安费诺

包装：盒 类别：静电控制，防静电，ESD，无尘室产品 静电控制屏蔽包，防静电袋、物料 描述：6.5X10 STATIC SHIELD BAG

SCS