| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：1006NAB；Package：SOT669；100 V, 6 A NPN high power bipolar transistor 1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. PNPcomplement:PHPT61006PY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrinted | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：1006NAB；Package：SOT669；100 V, 6 A NPN high power bipolar transistor 1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT61006PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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