SMBJ58CA

Marking：100CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01% Fast

SMF100A

Marking：100A；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor

Features ●Forsurfacemountedapplications ●Low-profilepackage ●Idealforautomatedplacement ●AvailableinUnidirectionalandBidirectional ●200Wpeakpulsepowercapabilitywitha10/1000μs waveform ●Lowincrementalsurgeresistance,excellentclamping capability ●Veryfastre

SMF100CA

Marking：100CA；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor

Features ●Forsurfacemountedapplications ●Low-profilepackage ●Idealforautomatedplacement ●AvailableinUnidirectionalandBidirectional ●200Wpeakpulsepowercapabilitywitha10/1000μs waveform ●Lowincrementalsurgeresistance,excellentclamping capability ●Veryfastre

STB100N10F7

Marking：100N10F7；Package：D2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STD100N10F7

Marking：100N10F7；Package：DPAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STD100N10LF7AG

Marking：100N10LF7；Package：DPAK；Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package

Feature Designedforautomotiveapplicationsand AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Applications Switchingapplications Description ThisN-channelP

STF100N10F7

Marking：100N10F7；Package：TO-220FP；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STI100N10F7

Marking：100N10F7；Package：I2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithan enhancedtrenc

STL100N3LLH6

Marking：100N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description Thisproductutilizesthe6thgenerationofdesign rules

STL100N3LLH7

Marking：100N3LLH7；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness Application ■Switchingapplications Description Thisdeviceutilizesthe7thgenerationofdesign rulesofST’sproprietarySTripFET™technology, withanewgatestructure.Th