PMEG100V100ELPE-Q

Marking：100V；Package：CFP15B；100 V, 10 A low leakage current Schottky barrier rectifier

1.Generaldescription LowleakagecurrentSchottkybarrierrectifierencapsulatedinaCFP15B(SOT1289B)powerand flatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •Lowleakagecurrent •HighthermalstabilityandlargeSafeOperation

PMEG2005AELD

Marking：1001；Package：SOD882D；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

PMEG2005EPK

Marking：1000；Package：DFN1608D-2；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaleadlessultrasmall SOD1608(DFN1608D-2)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderableside

RG100N650T7

Marking：100N650；Package：TO-247；This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

Features Highruggednessformotorcontrol VCE(sat)positivetemperaturecoefficient Verysoft,fastrecoveryanti-paralleldiode LowEMI Maximumjunctiontemperature175°C Applications PVInverter UPSPower Welder Halogen-free

RM1002

Marking：1002；Package：SOT-23；N-Channel Enhancement Mode Power MOS F ET

GeneralFeatures HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent Excellentpackageforgoodheatdissipation

RM100N40DF

Marking：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N40DFusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=40V,ID=100A RDS(ON)

RM100N40DFV

Marking：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=40V,ID=100A RDS(ON)

RM100N60AT2

Marking：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60AT2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=60V,ID=100A RDS(ON)

RM100N60BT2

Marking：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60BT2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=60V,ID=100A RDS(ON)

RM100N60HD

Marking：100N60；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description TheRM100N60HDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=60V,ID=100A RDS(ON)