丝印：1003；Package：SOT-23-6L；N-ChannelEnhancement Mode Power MOSFET

文件：1.08683 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：1003；Package：SOT-89；N-Channel Enhancement Mode Field Effect Transistor

文件：432.54 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：1003；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：737.94 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：1003；Package：SOT-23-6L；N-Channel Enhancement Mode Field Effect Transistor

文件：582.34 Kbytes 页数：6 Pages

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丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK NPN/PNP complement: PHPT610030NPK 2. Features and benefits • High thermal power dissipation capability • Suitabl

文件：280.2 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-C

文件：283.28 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：1003NPK；Package：LFPAK56D；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK 2. Features and benefits • High thermal power dissipation capability • Suitable

文件：334.68 Kbytes 页数：18 Pages

NEXPERIA

安世

丝印：1003NPK；Package：SOT1205；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q PNP/PNP complement: PHPT610030PK-Q 2. Features and benefits • High thermal power dissipation capability • Suit

文件：335.63 Kbytes 页数：18 Pages

NEXPERIA

安世

丝印：10030PK；Package：SOT1205；PNP/PNP high power double bipolar transistor

1. General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits • High thermal power dissipation capability • Suitab

文件：727.83 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：10035NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK 2. Features and benefits • Current gain matchi

文件：280.81 Kbytes 页数：14 Pages

NEXPERIA

安世