PMEG2005EPK

Marking：1000；Package：DFN1608D-2；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaleadlessultrasmall SOD1608(DFN1608D-2)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderableside

TPS628510DRLR

Marking：1000；Package：SOT-5X3；TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy(fulltemperature range) •TJ=–40°Cto+150°C •Familyof0.5-A,1-A,2-A(conti

INA191A1IYFDR

Marking：1000；Package：DSBGA；INAx191 40-V, Bidirectional, Ultra-Precise Current Sense Amplifier With picoamp IB and ENABLE in WCSP Package

BAS16LD

Marking：10000000；Package：SOD882D；Single high-speed switching diode

Featuresandbenefits *Highswitchingspeed:trr≤4ns *Lowleakagecurrent *Repetitivepeakreversevoltage: VRRM≤100V *AEC-Q101qualified. *Lowcapacitance *Reversevoltage:VR≤100V *UltrasmallandleadlessSMDplastic package *Solderablesidepads

PBSS5260QA

Marking：100010；Package：DFN1010D-3；60 V, 1.7 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4260QA. 2.Featuresandbenefits •Verylowcollector-

PDTB123YQA

Marking：100001；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

PDTB123YQA

Marking：100001；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

PDTD123YQA

Marking：100011；Package：SOT1215；50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits 500mAoutputcurrentcapability Built-inbiasresistors 10resistorratiotolerance Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm SuitableforAutomaticOptical Inspection(AOI)ofsold

UN2E5-1000L

Marking：1000L；High Voltage Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance Lowinsertionloss Excellentresponsetofastrisingtransients 2.5KAsurgecapabililytestedwith8/20μspulseasdefined byIEC61000-4-5 Applications CRTterminals CATVequipment Antennas Powersuplies Medicalelectron

UN2E5-1000LL

Marking：1000L；High Voltage Single Gas Discharge Tube

Features Non-Radioactive ROHScompliant Ultralowcapacitance Lowinsertionloss Excellentresponsetofastrisingtransients 2.5KAsurgecapabililytestedwith8/20μspulseasdefined byIEC61000-4-5 Applications CRTterminals CATVequipment Antennas Powersuplies Medicalelectron